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Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model

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dc.contributor.authorDegraeve, Robin
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorArreghini, Antonio
dc.contributor.authorTang, Baojun
dc.contributor.authorCapogreco, Elena
dc.contributor.authorLisoni, Judit
dc.contributor.authorRoussel, Philippe
dc.contributor.authorKaczer, Ben
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-21T07:14:30Z
dc.date.available2021-10-21T07:14:30Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22239
dc.source.beginpage558
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate9/12/2013
dc.source.conferencelocationWashington, DC USA
dc.source.endpage561
dc.title

Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model

dc.typeProceedings paper
dspace.entity.typePublication
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