A novel self-aligned double patterning integrated with Ga+ focused ion beam milling for silicon nanowire definition

dc.contributor.author	Rosa, Andressa Macedo
dc.contributor.author	Leonhardt, Alessandra
dc.contributor.author	de Souza, Lais Oliveira
dc.contributor.author	Barbosa Lima, Lucas Petersen
dc.contributor.author	Puydinger dos Santos, Marcos Vinicius
dc.contributor.author	Manera, Leandro Tiago
dc.contributor.author	Diniz, Jose Alexandre
dc.contributor.imecauthor	Leonhardt, Alessandra
dc.date.accessioned	2022-01-28T09:22:50Z
dc.date.available	2021-11-02T16:06:16Z
dc.date.available	2022-01-28T09:22:50Z
dc.date.issued	2021
dc.identifier.doi	10.1016/j.mee.2020.111493
dc.identifier.issn	0167-9317
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/38261
dc.publisher	ELSEVIER
dc.source.beginpage	111493
dc.source.issue	na
dc.source.journal	MICROELECTRONIC ENGINEERING
dc.source.numberofpages	9
dc.source.volume	237
dc.subject.keywords	FINFET
dc.title	A novel self-aligned double patterning integrated with Ga+ focused ion beam milling for silicon nanowire definition
dc.type	Journal article
dspace.entity.type	Publication
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