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Characterization of the post dry-etch cleaning of silicon for Ti-self-aligned silicide technology
Publication:
Characterization of the post dry-etch cleaning of silicon for Ti-self-aligned silicide technology
Date
1999
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kim, Young-Chang
;
Baklanov, Mikhaïl
;
Conard, Thierry
;
de Potter de ten Broeck, Muriel
;
Vanhaelemeersch, Serge
Journal
J. Electrochem. Soc.
Abstract
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1901
since deposited on 2021-10-06
Acq. date: 2025-10-23
Citations
Metrics
Views
1901
since deposited on 2021-10-06
Acq. date: 2025-10-23
Citations