Characterization of the post dry-etch cleaning of silicon for Ti-self-aligned silicide technology

dc.contributor.author	Kim, Young-Chang
dc.contributor.author	Baklanov, Mikhaïl
dc.contributor.author	Conard, Thierry
dc.contributor.author	de Potter de ten Broeck, Muriel
dc.contributor.author	Vanhaelemeersch, Serge
dc.contributor.imecauthor	Conard, Thierry
dc.contributor.imecauthor	de Potter de ten Broeck, Muriel
dc.contributor.imecauthor	Vanhaelemeersch, Serge
dc.contributor.orcidimec	Conard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimec	Vanhaelemeersch, Serge::0000-0003-2102-7395
dc.date.accessioned	2021-10-06T11:29:59Z
dc.date.available	2021-10-06T11:29:59Z
dc.date.issued	1999
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/3555
dc.source.beginpage	1549
dc.source.endpage	1556
dc.source.issue	4
dc.source.journal	J. Electrochem. Soc.
dc.source.volume	146
dc.title	Characterization of the post dry-etch cleaning of silicon for Ti-self-aligned silicide technology
dc.type	Journal article
dspace.entity.type	Publication
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