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Influence of pre and post process conditions on the composition of thin Si3N4 thin films (3nm) studied by XPS and TOFSIMS

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dc.contributor.authorConard, Thierry
dc.contributor.authorDe Witte, Hilde
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHoussa, Michel
dc.contributor.authorHeyns, Marc
dc.contributor.authorPomarede, C.
dc.contributor.authorWerkhoven, Chris
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.accessioned2021-10-14T12:45:36Z
dc.date.available2021-10-14T12:45:36Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4217
dc.source.beginpage69
dc.source.conferenceStructure and Electronic Properties of Ultrathin Dielectrics on Silicon and Related Structures; November 1999; Boston, MA, USA.
dc.source.conferencelocation
dc.source.endpage74
dc.title

Influence of pre and post process conditions on the composition of thin Si3N4 thin films (3nm) studied by XPS and TOFSIMS

dc.typeProceedings paper
dspace.entity.typePublication
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