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Performance improvement of tall triple gate devices with strained SiN layers
Publication:
Performance improvement of tall triple gate devices with strained SiN layers
Date
2005-11
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Collaert, Nadine
;
De Keersgieter, An
;
Kottantharayil, Anil
;
Rooyackers, Rita
;
Eneman, Geert
;
Goodwin, Michael
;
Eyckens, Brenda
;
Sleeckx, Erik
;
de Marneffe, Jean-Francois
;
De Meyer, Kristin
;
Absil, Philippe
;
Jurczak, Gosia
;
Biesemans, Serge
Journal
IEEE Electron Device Letters
Abstract
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1993
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Views
1993
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations