Publication:

Performance improvement of tall triple gate devices with strained SiN layers

Date

2005-11
Journal article
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dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorRooyackers, Rita
dc.contributor.authorEneman, Geert
dc.contributor.authorGoodwin, Michael
dc.contributor.authorEyckens, Brenda
dc.contributor.authorSleeckx, Erik
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorAbsil, Philippe
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSleeckx, Erik
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSleeckx, Erik::0000-0003-2560-6132
dc.date.accessioned2021-10-16T01:00:25Z
dc.date.available2021-10-16T01:00:25Z
dc.date.issued2005-11
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10245
dc.source.beginpage820
dc.source.endpage822
dc.source.issue11
dc.source.journalIEEE Electron Device Letters
dc.source.volume26
dc.title

Performance improvement of tall triple gate devices with strained SiN layers

dc.typeJournal article
dspace.entity.typePublication
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