Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology

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Author(s)

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Van der Plas, Geert

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Redolfi, Augusto

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Van Huylenbroeck, Stefaan

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Ivankovic, Andrej

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De Wachter, Bart

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Debusschere, Ingrid

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De Wolf, Ingrid

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Mercha, Abdelkarim

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Metrics

1 since deposited on 2021-10-21

Acq. date: 2025-10-24

2017 since deposited on 2021-10-21

Acq. date: 2025-10-24