Publication:

Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology

Date

2013
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorGuo, Wei
dc.contributor.authorMoroz, Victor
dc.contributor.authorVan der Plas, Geert
dc.contributor.authorChoi, M.
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorSmith, L.
dc.contributor.authorEneman, Geert
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorSu, P.D.
dc.contributor.authorIvankovic, Andrej
dc.contributor.authorDe Wachter, Bart
dc.contributor.authorDebusschere, Ingrid
dc.contributor.authorCroes, Kris
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorBeyer, Gerald
dc.contributor.authorSwinnen, Bart
dc.contributor.authorBeyne, Eric
dc.contributor.imecauthorGuo, Wei
dc.contributor.imecauthorVan der Plas, Geert
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorDe Wachter, Bart
dc.contributor.imecauthorDebusschere, Ingrid
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorSwinnen, Bart
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecVan der Plas, Geert::0000-0002-4975-6672
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.date.accessioned2021-10-21T08:03:25Z
dc.date.available2021-10-21T08:03:25Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22441
dc.source.beginpage340
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate9/12/2013
dc.source.conferencelocationWashington, DC USA
dc.source.endpage343
dc.title

Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
27291.pdf
Size:
1.31 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions