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Mobility reduction due to remote charge scattering in Al2O3/SiO2 gate-stacked MISFETs

Date

2002
Proceedings Paper
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dc.contributor.authorSaito, Shin-ichi
dc.contributor.authorShimamoto, Yasuhiro
dc.contributor.authorTorii, Kazuyoshi
dc.contributor.authorManabe, Yukiko
dc.contributor.authorCaymax, Matty
dc.contributor.authorMaes, Jan
dc.contributor.authorHiratani, Masahiko
dc.contributor.authorKimura, Shin-ichiro
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMaes, Jan
dc.date.accessioned2021-10-14T23:01:12Z
dc.date.available2021-10-14T23:01:12Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6785
dc.source.beginpage704
dc.source.conferenceExtended Abstracts of the 2002 International Conference on Solid State Devices - SSDM
dc.source.conferencedate17/09/2002
dc.source.conferencelocationNagoya Japan
dc.source.endpage705
dc.title

Mobility reduction due to remote charge scattering in Al2O3/SiO2 gate-stacked MISFETs

dc.typeProceedings paper
dspace.entity.typePublication
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