TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

Bonaldo, Stefano; Gorchichko, Mariia; Zhang, En Xia; Ma, Teng; Mattiazzo, Serena; Bagatin, Marta; Paccagnella, Alessandro; Gerardin, Simone; Schrimpf, Ronald D.; Reed, Robert A.; Linten, Dimitri; Mitard, Jerome; Fleetwood, Daniel M.

doi:10.1109/TNS.2022.3142385

Publication:

TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

Date

2022

Journal article

https://doi.org/10.1109/TNS.2022.3142385

Simple item page Full metadata Statistics

Author(s)

;

;

;

;

;

;

Paccagnella, Alessandro

;

;

;

;

;

;

Journal

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Metrics

1592 since deposited on 2022-07-31

Acq. date: 2025-12-09

TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

Date

Author(s)

Journal

Abstract

Description

Metrics

Views

Citations

Metrics

Views

Citations