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TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

 
dc.contributor.authorBonaldo, Stefano
dc.contributor.authorGorchichko, Mariia
dc.contributor.authorZhang, En Xia
dc.contributor.authorMa, Teng
dc.contributor.authorMattiazzo, Serena
dc.contributor.authorBagatin, Marta
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorGerardin, Simone
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorReed, Robert A.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2022-11-25T09:33:15Z
dc.date.available2022-07-31T02:29:16Z
dc.date.available2022-11-25T09:33:15Z
dc.date.issued2022
dc.description.wosFundingTextThis work was supported in part by the Air Force Office of Scientific Research and in part by the Air Force Research Laboratory through the Hi-REV Program.
dc.identifier.doi10.1109/TNS.2022.3142385
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40187
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage1444
dc.source.endpage1452
dc.source.issue7
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.numberofpages9
dc.source.volume69
dc.subject.keywordsLOW-FREQUENCY NOISE
dc.subject.keywords1/F NOISE
dc.subject.keywordsIONIZING-RADIATION
dc.subject.keywordsINTERFACE STATES
dc.subject.keywordsINGAAS FINFETS
dc.subject.keywordsBORDER TRAPS
dc.subject.keywordsX-RAY
dc.subject.keywordsBIAS DEPENDENCE
dc.subject.keywordsMOS
dc.subject.keywordsBULK
dc.title

TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

dc.typeJournal article
dspace.entity.typePublication
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