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Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current

Date

2001
Journal article
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dc.contributor.authorCrupi, Felice
dc.contributor.authorIannaccone, G.
dc.contributor.authorCrupi, Isodiana
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-10-14T16:44:08Z
dc.date.available2021-10-14T16:44:08Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5173
dc.source.beginpage1109
dc.source.endpage1113
dc.source.issue6
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume48
dc.title

Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current

dc.typeJournal article
dspace.entity.typePublication
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