Publication:

Characteristics of selective epitaxial SiGe deposition processes for recesssed source/drain applications

Date

2005
Proceedings Paper
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dc.contributor.authorLoo, Roger
dc.contributor.authorVerheyen, Peter
dc.contributor.authorEneman, Geert
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLeys, Frederik
dc.contributor.authorShamiryan, Denis
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorAbsil, Philippe
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.date.accessioned2021-10-16T03:02:03Z
dc.date.available2021-10-16T03:02:03Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10802
dc.source.beginpage112
dc.source.conference4th International conference on Silicon Epitaxy and Heterostructures - ICSI-4
dc.source.conferencedate23/05/2005
dc.source.conferencelocationHyogo Japan
dc.source.endpage113
dc.title

Characteristics of selective epitaxial SiGe deposition processes for recesssed source/drain applications

dc.typeProceedings paper
dspace.entity.typePublication
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