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Circuit design-oriented stochastic piecewise modeling of the postbreakdown gate current in MOSFETs: application to ring oscilators

Date

2012
Journal article
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dc.contributor.authorMartin-Martinez, Javier
dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorRodriguez, Rosana
dc.contributor.authorNafria, Monserrat
dc.contributor.authorAymerich, X.
dc.contributor.authorDierickx, Bart
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.accessioned2021-10-20T13:19:32Z
dc.date.available2021-10-20T13:19:32Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21115
dc.source.beginpage78
dc.source.endpage85
dc.source.issue1
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.volume12
dc.title

Circuit design-oriented stochastic piecewise modeling of the postbreakdown gate current in MOSFETs: application to ring oscilators

dc.typeJournal article
dspace.entity.typePublication
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