Publication:

A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

Date

2019-06
Proceedings Paper
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dc.contributor.authorArimura, Hiroaki
dc.contributor.authorCott, Daire
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorLoo, Roger
dc.contributor.authorWostyn, Kurt
dc.contributor.authorBrus, Stephan
dc.contributor.authorCapogreco, Elena
dc.contributor.authorOpdebeeck, Ann
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorConard, Thierry
dc.contributor.authorSuhard, Samuel
dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorKenis, Karine
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorMitard, Jerome
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorDe Heyn, Vincent
dc.contributor.authorMocuta, Dan
dc.contributor.authorCollaert, Nadine
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorOpdebeeck, Ann
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorSuhard, Samuel
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorDe Heyn, Vincent
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-27T07:27:00Z
dc.date.available2021-10-27T07:27:00Z
dc.date.issued2019-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32452
dc.source.beginpageT92
dc.source.conference2019 Symposia on VLSI Technology and Circuits
dc.source.conferencedate9/06/2019
dc.source.conferencelocationKyoto Japan
dc.source.endpageT93
dc.title

A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

dc.typeProceedings paper
dspace.entity.typePublication
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