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The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
Publication:
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
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Date
2022
Journal article
https://doi.org/10.1109/LED.2022.3206610
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Millesimo, M.
;
Borga, Matteo
;
Bakeroot, Benoit
;
Posthuma, Niels
;
Decoutere, Stefaan
;
Sangiorgi, E.
;
Fiegna, C.
;
Tallarico, A. N.
Journal
IEEE ELECTRON DEVICE LETTERS
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282
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last week
Acq. date: 2025-12-12
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1528
since deposited on 2022-11-14
Acq. date: 2025-12-12
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Metrics
Downloads
282
since deposited on 2022-11-14
44
last month
7
last week
Acq. date: 2025-12-12
Views
1528
since deposited on 2022-11-14
Acq. date: 2025-12-12
Citations