Publication:

The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

Date

2022
Journal article
https://doi.org/10.1109/LED.2022.3206610
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dc.contributor.authorMillesimo, M.
dc.contributor.authorBorga, Matteo
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorSangiorgi, E.
dc.contributor.authorFiegna, C.
dc.contributor.authorTallarico, A. N.
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2022-11-25T09:58:00Z
dc.date.available2022-11-14T03:02:34Z
dc.date.available2022-11-25T09:58:00Z
dc.date.embargo2022-11-30
dc.date.issued2022
dc.description.wosFundingTextThis work was supported in part by Intelligent Reliability 4.0 (iRel40 is a European co-funded innovation project that has been granted by the ECSEL JointUndertaking (JU) under Grant 876659); in part by the Horizon 2020 Research Program and participating countries; and in part by the national funding provided by Germany, including the Free States of Saxony and Thuringia, Austria, Belgium, Finland, France, Italy, The Netherlands, Slovakia, Spain, Sweden, and Turkey.
dc.identifier.doi10.1109/LED.2022.3206610
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40730
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage1846
dc.source.endpage1849
dc.source.issue11
dc.source.journalIEEE ELECTRON DEVICE LETTERS
dc.source.numberofpages4
dc.source.volume43
dc.subject.keywordsPERCOLATION THEORY
dc.subject.keywordsTHRESHOLD VOLTAGE
dc.subject.keywordsBREAKDOWN
dc.subject.keywordsTECHNOLOGY
dc.title

The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

dc.typeJournal article
dspace.entity.typePublication
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