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Low-k material cryoetch using high boiling point organic compounds to reduce plasma induced damage

Date

2018
Meeting abstract
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dc.contributor.authorChanson, Romain
dc.contributor.authorTillocher, Thomas
dc.contributor.authorLefaucheux, Philippe
dc.contributor.authorDussart, Remi
dc.contributor.authorZhang, Liping
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorShen, P
dc.contributor.authorDussarrat, Chrsitian
dc.contributor.authorMaekawa, Kaoru
dc.contributor.authoryatsuda, koichi
dc.contributor.authorTahara, Shigeru
dc.contributor.imecauthorZhang, Liping
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.date.accessioned2021-10-25T17:09:05Z
dc.date.available2021-10-25T17:09:05Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30390
dc.identifier.urlhttp://www.dry-process.org/2018/index.html
dc.source.conferenceDry Process Symposium
dc.source.conferencedate13/11/2018
dc.source.conferencelocationNogoya Japan
dc.title

Low-k material cryoetch using high boiling point organic compounds to reduce plasma induced damage

dc.typeMeeting abstract
dspace.entity.typePublication
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