Publication:

Nitrogen incorporation in HfSiO(N)/TaN gate stacks: impact on performances and NBTI

Date

2007
Journal article
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dc.contributor.authorAoulaiche, Marc
dc.contributor.authorHoussa, Michel
dc.contributor.authorDeweerd, Wim
dc.contributor.authorTrojman, Lionel
dc.contributor.authorConard, Thierry
dc.contributor.authorMaes, Jan
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T15:00:38Z
dc.date.available2021-10-16T15:00:38Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11648
dc.source.beginpage613
dc.source.endpage615
dc.source.issue7
dc.source.journalIEEE Electron Device Letters
dc.source.volume28
dc.title

Nitrogen incorporation in HfSiO(N)/TaN gate stacks: impact on performances and NBTI

dc.typeJournal article
dspace.entity.typePublication
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