Publication:
Separation of electron and hole trapping components of PBTI in SiON nMOS transistors
Date
| dc.contributor.author | Waltl, Michael | |
| dc.contributor.author | Stampfer, Bernhard | |
| dc.contributor.author | Rzepa, Gerhard | |
| dc.contributor.author | Kaczer, Ben | |
| dc.contributor.author | Grasser, Tibor | |
| dc.contributor.imecauthor | Kaczer, Ben | |
| dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
| dc.date.accessioned | 2021-10-29T07:45:25Z | |
| dc.date.available | 2021-10-29T07:45:25Z | |
| dc.date.issued | 2020 | |
| dc.identifier.issn | 0026-2714 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/36298 | |
| dc.identifier.url | https://doi.org/10.1016/j.microrel.2020.113746 | |
| dc.source.beginpage | 113746 | |
| dc.source.journal | Microelectronics Reliability | |
| dc.source.volume | 114 | |
| dc.title | Separation of electron and hole trapping components of PBTI in SiON nMOS transistors | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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