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CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities

 
dc.contributor.authorYadav, Sachin
dc.contributor.authorCardinael, Pieter
dc.contributor.authorZhao, Ming
dc.contributor.authorVondkar Kodandarama, Komal
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorAlian, Alireza
dc.contributor.authorKhaled, Ahmad
dc.contributor.authorMakovejev, Sergej
dc.contributor.authorEkoga, Enrique
dc.contributor.authorLederer, Dimitri
dc.contributor.authorRaskin, Jean-Pierre
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorYadav, Sachin
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorVondkar Kodandarama, Komal
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorAlian, Alireza
dc.contributor.imecauthorKhaled, Ahmad
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecYadav, Sachin::0000-0003-4530-2603
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecKhaled, Ahmad::0000-0003-2892-3176
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2023-01-19T09:31:40Z
dc.date.available2022-09-19T02:51:15Z
dc.date.available2023-01-19T09:31:40Z
dc.date.issued2021
dc.identifier.doi10.1109/ICICDT51558.2021.9626530
dc.identifier.eisbn978-1-6654-4998-4
dc.identifier.issn2381-3555
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40461
dc.publisherIEEE
dc.source.conferenceInternational Conference on IC Design and Technology (ICICDT)
dc.source.conferencedateSEP 15-17, 2021
dc.source.conferencelocationDresden
dc.source.journalna
dc.source.numberofpages4
dc.subject.keywordsDEGREES-C
dc.subject.keywordsPERFORMANCE
dc.subject.keywordsSILICON
dc.title

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities

dc.typeProceedings paper
dspace.entity.typePublication
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