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Conference contributions
Location and hardness of the oxide breakdown in short channel n- and p-MOSFETs
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Location and hardness of the oxide breakdown in short channel n- and p-MOSFETs
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Date
2002
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Crupi, Felice
;
Kaczer, Ben
;
Degraeve, Robin
;
De Keersgieter, An
;
Groeseneken, Guido
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1871
since deposited on 2021-10-14
Acq. date: 2026-01-11
Citations
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Views
1871
since deposited on 2021-10-14
Acq. date: 2026-01-11
Citations