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Location and hardness of the oxide breakdown in short channel n- and p-MOSFETs

Date

2002
Proceedings Paper
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dc.contributor.authorCrupi, Felice
dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.date.accessioned2021-10-14T21:18:33Z
dc.date.available2021-10-14T21:18:33Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6159
dc.source.beginpage55
dc.source.conference40th Annual International Reliability Physics Symposium Proceedings
dc.source.conferencedate7/04/2002
dc.source.conferencelocationDallas, TX USA
dc.source.endpage59
dc.title

Location and hardness of the oxide breakdown in short channel n- and p-MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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