Publication:

The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices

Date

2015
Proceedings Paper
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dc.contributor.authorVais, Abhitosh
dc.contributor.authorMartens, Koen
dc.contributor.authorFranco, Jacopo
dc.contributor.authorLin, Dennis
dc.contributor.authorAlian, AliReza
dc.contributor.authorRoussel, Philippe
dc.contributor.authorSioncke, Sonja
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T23:49:53Z
dc.date.available2021-10-22T23:49:53Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26028
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7112742
dc.source.beginpage5A.7
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate19/04/2015
dc.source.conferencelocationMonterey, CA USA
dc.title

The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices

dc.typeProceedings paper
dspace.entity.typePublication
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