Publication:

Compatibility of polysilicon with HfO2-based gate dielectrics for CMOS applications

Date

2003
Proceedings Paper
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dc.contributor.authorKaushik, V.
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorCaymax, Matty
dc.contributor.authorYoung, E.
dc.contributor.authorRöhr, Erika
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDelabie, Annelies
dc.contributor.authorClaes, Martine
dc.contributor.authorShi, Xiaoping
dc.contributor.authorChen, Jerry
dc.contributor.authorCarter, Richard
dc.contributor.authorConard, Thierry
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorSchaekers, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.accessioned2021-10-15T05:07:14Z
dc.date.available2021-10-15T05:07:14Z
dc.date.embargo9999-12-31
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7721
dc.source.beginpage391
dc.source.conferenceULSI Process Integration III
dc.source.conferencedate28/04/2003
dc.source.conferencelocationParis France
dc.source.endpage396
dc.title

Compatibility of polysilicon with HfO2-based gate dielectrics for CMOS applications

dc.typeProceedings paper
dspace.entity.typePublication
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