Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Conference contributions
Observation of contact resistivity independence from Schottky barrier height on heavily doped P-type SiGe
Publication:
Observation of contact resistivity independence from Schottky barrier height on heavily doped P-type SiGe
Copy permalink
Date
2016
Proceedings Paper
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
34831.pdf
510.44 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zhang, Jian
;
Yu, Hao
;
Schaekers, Marc
;
Horiguchi, Naoto
;
Wang, Linlin
;
Jiang, Yulong
Journal
Abstract
Description
Statistics
Views
1969
since deposited on 2021-10-23
Acq. date: 2026-02-24
Citations
Statistics
Views
1969
since deposited on 2021-10-23
Acq. date: 2026-02-24
Citations