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Observation of contact resistivity independence from Schottky barrier height on heavily doped P-type SiGe
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Observation of contact resistivity independence from Schottky barrier height on heavily doped P-type SiGe
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Date
2016
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zhang, Jian
;
Yu, Hao
;
Schaekers, Marc
;
Horiguchi, Naoto
;
Wang, Linlin
;
Jiang, Yulong
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1968
since deposited on 2021-10-23
2
last month
Acq. date: 2025-12-10
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Metrics
Views
1968
since deposited on 2021-10-23
2
last month
Acq. date: 2025-12-10
Citations