Publication:

Observation of contact resistivity independence from Schottky barrier height on heavily doped P-type SiGe

Date

2016
Proceedings Paper
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dc.contributor.authorZhang, Jian
dc.contributor.authorYu, Hao
dc.contributor.authorSchaekers, Marc
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorWang, Linlin
dc.contributor.authorJiang, Yulong
dc.contributor.imecauthorZhang, Jian
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-23T17:47:02Z
dc.date.available2021-10-23T17:47:02Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27656
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7998968/
dc.source.beginpage525
dc.source.conference13th IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT
dc.source.conferencedate25/10/2016
dc.source.conferencelocationHangzhou China
dc.source.endpage527
dc.title

Observation of contact resistivity independence from Schottky barrier height on heavily doped P-type SiGe

dc.typeProceedings paper
dspace.entity.typePublication
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