Publication:

Growth and characterization of atomic layer deposited WCxNy

Date

2005
Presentation
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dc.contributor.authorMartin Hoyas, Ana
dc.contributor.authorTravaly, Youssef
dc.contributor.authorSchuhmacher, Jorg
dc.contributor.authorSajavaara, T.
dc.contributor.authorWhelan, Caroline
dc.contributor.authorEyckens, Brenda
dc.contributor.authorRichard, Olivier
dc.contributor.authorGiangrandi, Simone
dc.contributor.authorBrijs, Bert
dc.contributor.authorJonas, A.M.
dc.contributor.authorVantomme, A.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCelis, Jean-Pierre
dc.contributor.authorMaex, Karen
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.accessioned2021-10-16T03:20:12Z
dc.date.available2021-10-16T03:20:12Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10865
dc.source.conferenceAVS 5th International Conference on Microelectronics and Interfaces (ICMI)
dc.source.conferencedate1/03/2005
dc.source.conferencelocationSanta Clara, CA USA
dc.title

Growth and characterization of atomic layer deposited WCxNy

dc.typeOral presentation
dspace.entity.typePublication
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