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Growth of high Ge content SiGe on (110) oriented Si wafers
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Growth of high Ge content SiGe on (110) oriented Si wafers
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Date
2012
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hikavyy, Andriy
;
Vanherle, Wendy
;
Vincent, Benjamin
;
Dekoster, Johan
;
Bender, Hugo
;
Moussa, Alain
;
Witters, Liesbeth
;
Hoffmann, Thomas Y.
;
Loo, Roger
Journal
Thin Solid Films
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1938
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Acq. date: 2026-01-09
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Views
1938
since deposited on 2021-10-20
1
last month
1
last week
Acq. date: 2026-01-09
Citations