Publication:

Growth of high Ge content SiGe on (110) oriented Si wafers

Date

2012
Journal article
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dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVanherle, Wendy
dc.contributor.authorVincent, Benjamin
dc.contributor.authorDekoster, Johan
dc.contributor.authorBender, Hugo
dc.contributor.authorMoussa, Alain
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-20T11:37:34Z
dc.date.available2021-10-20T11:37:34Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20813
dc.source.beginpage3179
dc.source.endpage3184
dc.source.issue8
dc.source.journalThin Solid Films
dc.source.volume520
dc.title

Growth of high Ge content SiGe on (110) oriented Si wafers

dc.typeJournal article
dspace.entity.typePublication
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