Publication:

Advantages of different source/drain engineering on scaled UTBOX FD SOI nMOSFETs at high temperature operation

Date

2014
Journal article
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dc.contributor.authorNicoletti, Talitha
dc.contributor.authorDos Santos, Sara
dc.contributor.authorMartino, Joao A.
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorVeloso, Anabela
dc.contributor.authorJurczak, Gosia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-22T04:18:06Z
dc.date.available2021-10-22T04:18:06Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24322
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110113002967
dc.source.beginpage53
dc.source.endpage58
dc.source.issue1
dc.source.journalSolid-State Electronics
dc.source.volume91
dc.title

Advantages of different source/drain engineering on scaled UTBOX FD SOI nMOSFETs at high temperature operation

dc.typeJournal article
dspace.entity.typePublication
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