Publication:
OrbiSIMS depth profiling of semiconductor materials-Useful yield and depth resolution
| dc.contributor.author | Zhou, Yundong | |
| dc.contributor.author | Franquet, Alexis | |
| dc.contributor.author | Spampinato, Valentina | |
| dc.contributor.author | Merkulov, Alex | |
| dc.contributor.author | Keenan, Michael R. | |
| dc.contributor.author | van der Heide, Paul | |
| dc.contributor.author | Trindade, Gustavo F. | |
| dc.contributor.author | Vandervorst, Wilfried | |
| dc.contributor.author | Gilmore, Ian S. | |
| dc.contributor.imecauthor | Franquet, Alexis | |
| dc.contributor.imecauthor | Spampinato, Valentina | |
| dc.contributor.imecauthor | Merkulov, Alex | |
| dc.contributor.imecauthor | Vandervorst, Wilfried | |
| dc.contributor.imecauthor | van der Heide, Paul | |
| dc.contributor.orcidimec | Franquet, Alexis::0000-0002-7371-8852 | |
| dc.contributor.orcidimec | Spampinato, Valentina::0000-0003-3225-6740 | |
| dc.contributor.orcidimec | Merkulov, Alex::0000-0003-4101-0873 | |
| dc.contributor.orcidimec | van der Heide, Paul::0000-0001-6292-0329 | |
| dc.date.accessioned | 2025-01-23T14:54:58Z | |
| dc.date.available | 2024-09-17T17:59:59Z | |
| dc.date.available | 2025-01-23T14:54:58Z | |
| dc.date.issued | 2024 | |
| dc.description.wosFundingText | This work was funded by the UK National Measurement System. NPL is operated by NPL Management Ltd, a wholly owned company of the UK Department of Science, Innovation and Technology. The authors are grateful to Maxim Korytov (Imec) for the STEM-HAADF imaging of the Sb delta sample. We are also grateful to Alexander Pirkl (IONTOF GmbH, Germany) for advice on optimizing OrbiSIMS technical parameters and Paula Peres (CAMECA, France) for helpful comments. | |
| dc.identifier.doi | 10.1116/6.0003821 | |
| dc.identifier.issn | 0734-2101 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/44511 | |
| dc.publisher | A V S AMER INST PHYSICS | |
| dc.source.beginpage | Art. 053208 | |
| dc.source.endpage | N/A | |
| dc.source.issue | 5 | |
| dc.source.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | |
| dc.source.numberofpages | 9 | |
| dc.source.volume | 42 | |
| dc.subject.keywords | SIMS | |
| dc.subject.keywords | ENERGY | |
| dc.subject.keywords | IONS | |
| dc.subject.keywords | MASS | |
| dc.title | OrbiSIMS depth profiling of semiconductor materials-Useful yield and depth resolution | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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