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Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration

Date

2019
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dc.contributor.authorPorret, Clément
dc.contributor.authorVohra, Anurag
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorHuang, Yan-Hua
dc.contributor.authorTirrito, Matteo
dc.contributor.authorKohen, David
dc.contributor.authorMargetis, Joe
dc.contributor.authorTolle, John
dc.contributor.authorPetersen Barbosa Lima, Lucas
dc.contributor.authorKhazaka, Rami
dc.contributor.authorLanger, Robert
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorPetersen Barbosa Lima, Lucas
dc.contributor.imecauthorKhazaka, Rami
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-27T16:18:41Z
dc.date.available2021-10-27T16:18:41Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33820
dc.source.conferenceNagoya University
dc.source.conferencedate23/05/2019
dc.source.conferencelocationNagoya Japan
dc.title

Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration

dc.typeOral presentation
dspace.entity.typePublication
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