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Channel length influence on the low-frequency noise of strained 45o rotated triple gate SOI nFinFETs

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dc.contributor.authorde Souza, M.A.S.
dc.contributor.authorDoria, R.T.
dc.contributor.authorMartino, Joao
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorPavanello, Marcelo
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-22T01:09:45Z
dc.date.available2021-10-22T01:09:45Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23726
dc.source.beginpage1
dc.source.conference10th Workshop on the Thematic Network on Silicon on Insulator Technology, Devices and Circuits - EUROSOI
dc.source.conferencedate29/01/2014
dc.source.conferencelocationTaragona Spain
dc.source.endpage2
dc.title

Channel length influence on the low-frequency noise of strained 45o rotated triple gate SOI nFinFETs

dc.typeProceedings paper
dspace.entity.typePublication
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