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Conference contributions
Selective growth of strained Ge on relaxed SiGe in shallow trench isolation for p-MOS FINFET
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Selective growth of strained Ge on relaxed SiGe in shallow trench isolation for p-MOS FINFET
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Date
2014
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29850.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Sun, Jianwu
;
Loo, Roger
;
Witters, Liesbeth
;
Hikavyy, Andriy
;
Shimura, Yosuke
;
Favia, Paola
;
Richard, Olivier
;
Bender, Hugo
;
Vandervorst, Wilfried
;
Collaert, Nadine
;
Thean, Aaron
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Views
1877
since deposited on 2021-10-22
1
last month
1
last week
Acq. date: 2026-01-09
Citations