Publication:

Selective growth of strained Ge on relaxed SiGe in shallow trench isolation for p-MOS FINFET

Date

2014
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dc.contributor.authorSun, Jianwu
dc.contributor.authorLoo, Roger
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorShimura, Yosuke
dc.contributor.authorFavia, Paola
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T06:14:26Z
dc.date.available2021-10-22T06:14:26Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24575
dc.identifier.urlhttp://www.emrs-strasbourg.com/index.php?option=com_abstract&task=view&id=276&day=2014-09-16&year=2014&Itemid=99999999&id_season
dc.source.beginpage6 5
dc.source.conferenceE-MRS Fall Meeting Symposium J: Alternative Semiconductor Integration in Si Microelectronics
dc.source.conferencedate15/09/2014
dc.source.conferencelocationWarsaw Poland
dc.title

Selective growth of strained Ge on relaxed SiGe in shallow trench isolation for p-MOS FINFET

dc.typeMeeting abstract
dspace.entity.typePublication
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