Publication:

GaN-based HEMTs tested under high temperature storage test

Date

2011
Journal article
https://doi.org/10.1016/
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dc.contributor.authorMarcon, Denis
dc.contributor.authorKang, Xuanwu
dc.contributor.authorViaene, John
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMertens, Robert
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorViaene, John
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-19T16:01:26Z
dc.date.available2021-10-19T16:01:26Z
dc.date.issued2011
dc.identifier.doi10.1016/
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19380
dc.source.beginpage1717
dc.source.endpage1720
dc.source.issue9_11
dc.source.journalMicroelectronics Reliability
dc.source.volume51
dc.title

GaN-based HEMTs tested under high temperature storage test

dc.typeJournal article
dspace.entity.typePublication
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