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Instability study of high-k inter-gate dielectric stacks on hybrid floating gate flash memory

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dc.contributor.authorZahid, Mohammed
dc.contributor.authorDegraeve, Robin
dc.contributor.authorBreuil, Laurent
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-21T14:56:12Z
dc.date.available2021-10-21T14:56:12Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23429
dc.source.beginpageMY.6
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate16/04/2013
dc.source.conferencelocationMonterey, CA USA
dc.title

Instability study of high-k inter-gate dielectric stacks on hybrid floating gate flash memory

dc.typeProceedings paper
dspace.entity.typePublication
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