A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon

dc.contributor.author	Chen, J.
dc.contributor.author	Cornagliotti, Emanuele
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Hieckmann, E.
dc.contributor.author	Weber, J.
dc.contributor.author	Poortmans, Jef
dc.contributor.imecauthor	Cornagliotti, Emanuele
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Poortmans, Jef
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimec	Poortmans, Jef::0000-0003-2077-2545
dc.date.accessioned	2021-10-19T12:44:16Z
dc.date.available	2021-10-19T12:44:16Z
dc.date.embargo	9999-12-31
dc.date.issued	2011
dc.identifier.issn	1862-6254
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/18657
dc.source.beginpage	277
dc.source.endpage	279
dc.source.issue	8
dc.source.journal	Physica Status Solidi. Rapid Research Letters
dc.source.volume	5
dc.title	A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon
dc.type	Journal article
dspace.entity.type	Publication
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