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Impact of device scaling on the electrical properties of MoS2 field-effect transistors
Publication:
Impact of device scaling on the electrical properties of MoS2 field-effect transistors
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Date
2021
Journal article
https://doi.org/10.1038/s41598-021-85968-y
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Arutchelvan, Goutham
;
Smets, Quentin
;
Verreck, Devin
;
Ahmed, Zubair
;
Gaur, Abhinav
;
Sutar, Surajit
;
Jussot, Julien
;
Groven, Benjamin
;
Heyns, Marc
;
Lin, Dennis
;
Asselberghs, Inge
;
Radu, Iuliana
Journal
SCIENTIFIC REPORTS
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467
since deposited on 2022-02-24
49
last month
10
last week
Acq. date: 2025-12-15
Views
1929
since deposited on 2022-02-24
3
last month
Acq. date: 2025-12-15
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