Publication:

Impact of device scaling on the electrical properties of MoS2 field-effect transistors

Date

2021
Journal article
https://doi.org/10.1038/s41598-021-85968-y
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dc.contributor.authorArutchelvan, Goutham
dc.contributor.authorSmets, Quentin
dc.contributor.authorVerreck, Devin
dc.contributor.authorAhmed, Zubair
dc.contributor.authorGaur, Abhinav
dc.contributor.authorSutar, Surajit
dc.contributor.authorJussot, Julien
dc.contributor.authorGroven, Benjamin
dc.contributor.authorHeyns, Marc
dc.contributor.authorLin, Dennis
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorRadu, Iuliana
dc.contributor.imecauthorArutchelvan, Goutham
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorAhmed, Zubair
dc.contributor.imecauthorSutar, Surajit
dc.contributor.imecauthorJussot, Julien
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecJussot, Julien::0000-0002-2484-3462
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.date.accessioned2022-02-24T16:15:50Z
dc.date.available2022-02-24T16:15:50Z
dc.date.issued2021
dc.identifier.doi10.1038/s41598-021-85968-y
dc.identifier.issn2045-2322
dc.identifier.pmidMEDLINE:33758215
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39127
dc.publisherNATURE RESEARCH
dc.source.beginpage6610
dc.source.issue1
dc.source.journalSCIENTIFIC REPORTS
dc.source.numberofpages11
dc.source.volume11
dc.title

Impact of device scaling on the electrical properties of MoS2 field-effect transistors

dc.typeJournal article
dspace.entity.typePublication
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