Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Articles
Correction to: The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography (vol 266,114034,2024)
Publication:
Correction to: The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography (vol 266,114034,2024)
Copy permalink
Date
2025
Journal Article Correction
https://doi.org/10.1016/j.ultramic.2025.114115
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
Correction to the article
298.48 KB
CC-BY - Attribution
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Guerguis, Bavley
;
Cuduvally, Ramya
;
Morris, Richard
;
Arcuri, Gabriel
;
Langelier, Brian
;
Bassim, Nabil
Journal
ULTRAMICROSCOPY
Abstract
Description
Statistics
Downloads
1
since deposited on 2025-04-01
Acq. date: 2026-07-18
Views
172
since deposited on 2025-04-01
8
last month
8
last week
Acq. date: 2026-07-18
Citations
Statistics
Downloads
1
since deposited on 2025-04-01
Acq. date: 2026-07-18
Views
172
since deposited on 2025-04-01
8
last month
8
last week
Acq. date: 2026-07-18
Citations