Correction to: The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography (vol 266,114034,2024)

cris.virtual.department	#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid	0000-0002-0902-7088
cris.virtualsource.department	109cf3f2-1b04-4cf0-afe4-cb09c5f6c4ee
cris.virtualsource.orcid	109cf3f2-1b04-4cf0-afe4-cb09c5f6c4ee
dc.contributor.author	Guerguis, Bavley
dc.contributor.author	Cuduvally, Ramya
dc.contributor.author	Morris, Richard
dc.contributor.author	Arcuri, Gabriel
dc.contributor.author	Langelier, Brian
dc.contributor.author	Bassim, Nabil
dc.contributor.imecauthor	Morris, Richard J. H.
dc.date.accessioned	2025-04-01T06:43:18Z
dc.date.available	2025-04-01T06:43:18Z
dc.date.issued	2025
dc.identifier.doi	10.1016/j.ultramic.2025.114115
dc.identifier.issn	0304-3991
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/45474
dc.original.retracted	https://imec-publications.be/handle/20.500.12860/44479
dc.publisher	ELSEVIER
dc.source.beginpage	114115
dc.source.journal	ULTRAMICROSCOPY
dc.source.numberofpages	1
dc.source.volume	271
dc.title	Correction to: The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography (vol 266,114034,2024)
dc.type	Journal article correction
dspace.entity.type	Publication
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