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The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography (vol 266,114034,2024)

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2025-MAY
Journal Article Correction
https://doi.org/10.1016/j.ultramic.2025.114115
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dc.contributor.authorGuerguis, Bavley
dc.contributor.authorCuduvally, Ramya
dc.contributor.authorMorris, Richard J. H.
dc.contributor.authorArcuri, Gabriel
dc.contributor.authorLangelier, Brian
dc.contributor.authorBassim, Nabil
dc.contributor.imecauthorMorris, Richard J. H.
dc.date.accessioned2025-04-01T06:43:18Z
dc.date.available2025-04-01T06:43:18Z
dc.date.issued2025-MAY
dc.identifier.doi10.1016/j.ultramic.2025.114115
dc.identifier.issn0304-3991
dc.identifier.pmidMEDLINE:39934067
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45474
dc.publisherELSEVIER
dc.source.journalULTRAMICROSCOPY
dc.source.numberofpages1
dc.source.volume271
dc.title

The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography (vol 266,114034,2024)

dc.typeJournal article correction
dspace.entity.typePublication
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