Publication:

LaSiOx- and Al2O3-Inserted Low-Temperature Gate-Stacks for Improved BTI Reliability in 3-D Sequential Integration

Date

2022
Journal article
https://doi.org/10.1109/TED.2022.3141983
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dc.contributor.authorWu, Zhicheng
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVandooren, Anne
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorRoussel, Philippe
dc.contributor.authorKaczer, Ben
dc.contributor.authorLinten, Dimitri
dc.contributor.authorCollaert, Nadine
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorWu, Zhicheng
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecWu, Zhicheng::0000-0003-3589-3470
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecBen Kaczer::0000-0002-1484-4007
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2023-08-11T08:08:26Z
dc.date.available2023-06-20T10:35:57Z
dc.date.available2023-08-11T08:08:26Z
dc.date.embargo9999-12-31
dc.date.issued2022
dc.identifier.doi10.1109/TED.2022.3141983
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41920
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage915
dc.source.endpage921
dc.source.issue3
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages7
dc.source.volume69
dc.subject.keywordsDEVICES
dc.title

LaSiOx- and Al2O3-Inserted Low-Temperature Gate-Stacks for Improved BTI Reliability in 3-D Sequential Integration

dc.typeJournal article
dspace.entity.typePublication
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