Publication:

Reliability of SiGe Channel MOS

Date

2012
Proceedings Paper
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorMitard, Jerome
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorEneman, Geert
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCho, Moon Ju
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorHellings, Geert
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGrasser, T.
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-20T11:03:49Z
dc.date.available2021-10-20T11:03:49Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20690
dc.source.beginpage177
dc.source.conferenceSiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage195
dc.title

Reliability of SiGe Channel MOS

dc.typeProceedings paper
dspace.entity.typePublication
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