Publication:

On the impact of defects close to the gate electrode on the low-frequency 1/f noise

Date

 
dc.contributor.authorMagnone, Paolo
dc.contributor.authorPantisano, Luigi
dc.contributor.authorCrupi, Felice
dc.contributor.authorTrojman, Lionel
dc.contributor.authorPace, Calogero
dc.contributor.authorGiusi, Gino
dc.date.accessioned2021-10-17T08:42:13Z
dc.date.available2021-10-17T08:42:13Z
dc.date.embargo9999-12-31
dc.date.issued2008-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14100
dc.source.beginpage1056
dc.source.endpage1058
dc.source.journalIEEE Electron Devices Letters
dc.source.volume29
dc.title

On the impact of defects close to the gate electrode on the low-frequency 1/f noise

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
16825.pdf
Size:
216.32 KB
Format:
Adobe Portable Document Format
Publication available in collections: