Publication:

ESD study on a-IGZO TFT device architectures

Date

2018-10-28
Proceedings Paper
https://doi.org/10.23919/EOS/ESD.2018.8509748
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dc.contributor.authorSimicic, Marko
dc.contributor.authorHellings, Geert
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorMyny, Kris
dc.contributor.authorLinten, Dimitri
dc.contributor.imecauthorSimicic, Marko
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorMyny, Kris
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.contributor.orcidimecSimicic, Marko::0000-0002-3623-1842
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecChen, Shih-Hung::0000-0002-6481-2951
dc.date.accessioned2022-08-18T15:06:33Z
dc.date.available2022-08-18T13:08:02Z
dc.date.available2022-08-18T15:06:33Z
dc.date.embargo2020-10-28
dc.date.issued2018-10-28
dc.identifier.doi10.23919/EOS/ESD.2018.8509748
dc.identifier.eisbn978-1-5853-7302-4
dc.identifier.isbn978-1-5853-7302-4
dc.identifier.issn0739-5159
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40270
dc.publisherIEEE
dc.source.conference40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)
dc.source.conferencedateSEP 23-28, 2018
dc.source.conferencelocationReno
dc.source.journalna
dc.source.numberofpages7
dc.subject.disciplineElectrical & electronic engineering
dc.subject.keywordsThin film transistors
dc.subject.keywordsElectrostatic discharge
dc.subject.keywordsESD
dc.subject.keywordsindium-gallium-zinc-oxide
dc.subject.keywordsIGZO
dc.title

ESD study on a-IGZO TFT device architectures

dc.typeProceedings paper
dspace.entity.typePublication
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