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The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETs

Date

2009
Journal article
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dc.contributor.authorCaymax, Matty
dc.contributor.authorLeys, Frederik
dc.contributor.authorMitard, Jerome
dc.contributor.authorMartens, Koen
dc.contributor.authorYang, Lijun
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorMeuris, Marc
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-17T21:31:56Z
dc.date.available2021-10-17T21:31:56Z
dc.date.issued2009
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15071
dc.source.beginpageH979
dc.source.endpageH985
dc.source.issue12
dc.source.journalJournal of the Electrochemical Society
dc.source.volume156
dc.title

The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETs

dc.typeJournal article
dspace.entity.typePublication
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