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Characterisation of the DARE180U MOSFET Channel Geometry TID Radiation Sensitivity

 
dc.contributor.authorJansen, R. J. E.
dc.contributor.authorGlass, B.
dc.contributor.authorBoatella-Polo, C.
dc.contributor.authorThys, Geert
dc.contributor.authorVerhaegen, Shane
dc.contributor.authorFranciscatto, Giancarlo
dc.contributor.authorWouters, Jan
dc.contributor.authorLambrichts, Danny
dc.contributor.authorVargas-Sierra, S.
dc.contributor.authorGonzalez Lujan, J. J.
dc.contributor.imecauthorThys, Geert
dc.contributor.imecauthorVerhaegen, Shane
dc.contributor.imecauthorFranciscatto, Giancarlo
dc.contributor.imecauthorWouters, Jan
dc.contributor.imecauthorLambrichts, Danny
dc.contributor.orcidimecThys, Geert::0000-0002-5320-7844
dc.contributor.orcidimecFranciscatto, Giancarlo::0000-0002-4636-8674
dc.contributor.orcidimecWouters, Jan::0000-0002-4857-6020
dc.contributor.orcidimecLambrichts, Danny::0000-0002-3665-3148
dc.date.accessioned2023-01-05T13:55:20Z
dc.date.available2022-10-06T02:49:33Z
dc.date.available2023-01-05T13:55:20Z
dc.date.issued2022
dc.description.wosFundingTextThis work has been funded by the European Space Agency contracts 40000104087 and 4000108480
dc.identifier.doi10.1109/RADECS47380.2019.9745671
dc.identifier.eisbn978-1-7281-5699-6
dc.identifier.issnna
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40538
dc.publisherIEEE
dc.source.beginpage394
dc.source.conference19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
dc.source.conferencedateSEP 16-20, 2019
dc.source.conferencelocationMontpellier
dc.source.endpage398
dc.source.journalna
dc.source.numberofpages5
dc.subject.keywords130 NM
dc.subject.keywordsDEVICES
dc.title

Characterisation of the DARE180U MOSFET Channel Geometry TID Radiation Sensitivity

dc.typeProceedings paper
dspace.entity.typePublication
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